DocumentCode :
728786
Title :
Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments
Author :
Hayashi, Kazushi ; Hino, Aya ; Tao, Hiroaki ; Ochi, Mototaka ; Goto, Hiroshi ; Kugimiya, Toshihiro
Author_Institution :
Electron. Res. Lab., Kobe Steel, Ltd., Kobe, Japan
fYear :
2015
fDate :
1-4 July 2015
Firstpage :
131
Lastpage :
132
Abstract :
Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.
Keywords :
amorphous semiconductors; annealing; defect states; diffusion; gallium compounds; hydrogen; hydrogenation; indium compounds; photoelectron spectra; semiconductor thin films; InGaZnO:H; TPYS spectra; amorphous IGZO thin films; hydrogen outdiffusion; hydrogen-related defect states; hydrogenation; photoelectron emission; thermal annealing; total photoyield spectroscopy; vacuum level; Annealing; Atomic measurements; Films; Hydrogen; Semiconductor device measurement; Spectroscopy; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/AM-FPD.2015.7173219
Filename :
7173219
Link To Document :
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