DocumentCode :
728787
Title :
Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs
Author :
Kito, Katsuya ; Hayashi, Hisashi ; Kitajima, Shuhei ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
fYear :
2015
fDate :
1-4 July 2015
Firstpage :
137
Lastpage :
138
Abstract :
We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different between the n-type and p-type poly-Si TFTs. Based on these results, we proposed a detection method to obtain simultaneously temperature and illuminance by hybrid-type carrier-generation sensors using n-type and p-type Poly-Si TFTs.
Keywords :
elemental semiconductors; silicon; temperature measurement; temperature sensors; thin film sensors; thin film transistors; Si; hybrid-type carrier-generation sensor; n-type poly-Si TFT; off-leakage current; p-type poly-Si TFT; temperature detection; visible light illumination detection; Oscillators; Temperature; Temperature dependence; Temperature measurement; Temperature sensors; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/AM-FPD.2015.7173222
Filename :
7173222
Link To Document :
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