Title :
Application of luminescence technology for solar PV industry
Author :
Shih-Hung Lin ; Tzu-Huan Cheng
Author_Institution :
Dept. of Electr. Eng., Tunghai Univ., Taichung, Taiwan
Abstract :
The luminescence technology is a non-destructive testing and can be applied for kinds of solar cells such as c-Si, thin film (α-Si, CIGS, and CdTe) and multi-junction solar cells. The luminescence intensity is correlated to the quality of absorber or junction and suitable to be developed as monitors of device property during process. Photoluminescence (PL) and Electroluminescence (EL) are most common luminescence metrologies and they can help to identify the band gap, defect level, defect density, radiative recombination coefficient, junction quality, and implied open circuit voltage (Voc). The 2D PL/EL image can help to evaluate the uniformity and physical defect information such as crack, contact disconnection, shunting points, serious resistance distribution, and impurity. The failure analysis of long-term reliability test (light illumination and thermal stress) by the combination of PL/EL technology can help to identify the key root cause. The qualitative analysis of PL/EL metrologies can apply for process correlation to stabilize the production line and/or further improve the efficiency.
Keywords :
cadmium compounds; electroluminescence; energy gap; failure analysis; gallium compounds; indium compounds; nondestructive testing; photoluminescence; reliability; semiconductor thin films; silicon; solar cells; ternary semiconductors; thermal stresses; Cd(InGa)Se2; CdTe; Si; band gap; defect density; defect level; electroluminescence; failure analysis; junction quality; light illumination; long-term reliability test; luminescence intensity; luminescence technology; multijunction solar cells; nondestructive testing; open circuit voltage; photoluminescence; physical defect information; radiative recombination coefficient; solar potovoltaic industry; thermal stress; thin film; uniformity defect information; Electroluminescence; Junctions; Phonons; Photonic band gap; Photovoltaic cells; Radiative recombination; Temperature measurement;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173232