• DocumentCode
    728798
  • Title

    Boron subphthalocyanine-based organic photovoltaic device with record high open circuit voltage

  • Author

    Po-Sheng Wang ; Cheng-Chieh Lee ; Jiun-Haw Lee ; Lee-Yih Wang ; Chi-Feng Lin ; Tien-Lung Chiu

  • Author_Institution
    Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    1-4 July 2015
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    In this work, we demonstrated an inverted planar heterojunction organic photovoltaic (OPV) device with boron subphthalocyanine (SubPc) material. In this device, ZnO was used as the electron extraction layer, which was coated with ethoxylated polyethylenimine (PEIE) for smoothen the ZnO surface. Open circuit voltage of this OPV can be as high as 1.36 eV, which is close to the theoretical limit of SubPc-based device.
  • Keywords
    III-V semiconductors; boron compounds; organic compounds; solar cells; wide band gap semiconductors; zinc compounds; OPV device; PEIE; SubPc material; ZnO; ZnO electron extraction layer; ZnO surface; boron subphthalocyanine material; ethoxylated polyethylenimine; inverted planar heterojunction organic photovoltaic device; record high open circuit voltage; Absorption; II-VI semiconductor materials; Indium tin oxide; Rough surfaces; Surface morphology; Surface treatment; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/AM-FPD.2015.7173236
  • Filename
    7173236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=728798