DocumentCode :
728798
Title :
Boron subphthalocyanine-based organic photovoltaic device with record high open circuit voltage
Author :
Po-Sheng Wang ; Cheng-Chieh Lee ; Jiun-Haw Lee ; Lee-Yih Wang ; Chi-Feng Lin ; Tien-Lung Chiu
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2015
fDate :
1-4 July 2015
Firstpage :
179
Lastpage :
182
Abstract :
In this work, we demonstrated an inverted planar heterojunction organic photovoltaic (OPV) device with boron subphthalocyanine (SubPc) material. In this device, ZnO was used as the electron extraction layer, which was coated with ethoxylated polyethylenimine (PEIE) for smoothen the ZnO surface. Open circuit voltage of this OPV can be as high as 1.36 eV, which is close to the theoretical limit of SubPc-based device.
Keywords :
III-V semiconductors; boron compounds; organic compounds; solar cells; wide band gap semiconductors; zinc compounds; OPV device; PEIE; SubPc material; ZnO; ZnO electron extraction layer; ZnO surface; boron subphthalocyanine material; ethoxylated polyethylenimine; inverted planar heterojunction organic photovoltaic device; record high open circuit voltage; Absorption; II-VI semiconductor materials; Indium tin oxide; Rough surfaces; Surface morphology; Surface treatment; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/AM-FPD.2015.7173236
Filename :
7173236
Link To Document :
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