Title :
Flexible displays using c-axis-aligned-crystal oxide semiconductors
Author :
Koezuka, Junichi ; Okazaki, Kenichi ; Idojiri, Satoru ; Shima, Yukinori ; Takahashi, Kei ; Nakamura, Daiki ; Yamazaki, Shunpei
Author_Institution :
Adv. Film Device Inc., Tochigi, Japan
Abstract :
We developed a c-axis-aligned-crystal In-Ga-Zn oxide (CAAC-IGZO) with a new composition that achieved higher field-effect mobility than a conventional CAAC-IGZO FET. The use of the new CAAC-IGZO for an active layer results in a channel-etched field-effect transistor (FET) with high mobility, normally-off characteristics, and high reliability. We fabricated a 13.3-inch 8K 664-ppi foldable organic light-emitting diode (OLED) display panel and the world´s largest 81-inch 8K OLED kawara-type multi-display comprising white top-emission OLEDs with color filters employing the high-mobility CAAC-IGZO FETs in the backplane and using a transfer technology based on an inorganic separation layer.
Keywords :
LED displays; field effect transistors; flexible displays; gallium compounds; indium compounds; optical filters; organic light emitting diodes; semiconductor device reliability; InGaZnO; OLED display; OLED kawara-type multidisplay; c-axis-aligned-crystal oxide semiconductor; channel-etched field-effect transistor; color filter; flexible display; foldable organic light-emitting diode display; high mobility normally-off characteristics; high-mobility CAAC-IGZO FET; inorganic separation layer; reliability; size 13.3 inch; size 81 inch; white top-emission OLED; Color; Field effect transistors; Films; Glass; Organic light emitting diodes; Reliability; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173244
