مرکز منطقه ای اطلاع رساني علوم و فناوري - Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-<formula formulatype="inline"> <img src="/images/tex/16813.gif" alt="\\mu{\\rm m}"> </formula> Wavelength

DocumentCode :

72883

Title :

Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3- $\\mu{\\rm m}$ Wavelength

Author :

Sato, Nobuyoshi ; Shirao, M. ; Sato, Takao ; Yukinari, Masashi ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Arai, Shigehisa

Author_Institution :

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan

Volume :

Issue :

fYear :

2013

fDate :

15-Apr-13

Firstpage :

728

Lastpage :

730

Abstract :

Room-temperature continuous-wave operation of a 1.3- $\\mu{\\rm m}$ npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain $\\beta$ of 0.02.