Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan
Volume :
25
Issue :
8
fYear :
2013
fDate :
15-Apr-13
Firstpage :
728
Lastpage :
730
Abstract :
Room-temperature continuous-wave operation of a 1.3- npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain of 0.02.
Keywords :
AlGaInAs/InP; quantum well laser; transistor laser;