DocumentCode :
72883
Title :
Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3- \\mu{\\rm m} Wavelength
Author :
Sato, Nobuyoshi ; Shirao, M. ; Sato, Takao ; Yukinari, Masashi ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Arai, Shigehisa
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan
Volume :
25
Issue :
8
fYear :
2013
fDate :
15-Apr-13
Firstpage :
728
Lastpage :
730
Abstract :
Room-temperature continuous-wave operation of a 1.3- \\mu{\\rm m} npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain \\beta of 0.02.
Keywords :
AlGaInAs/InP; quantum well laser; transistor laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2249508
Filename :
6471747
Link To Document :
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