DocumentCode :
72896
Title :
Decimal Tunneling Magnetoresistance States in Fe/GaAlAs/GaMnAs Magnetic Tunnel Junction
Author :
Taehee Yoo ; Sanghoon Lee ; Xinyu Liu ; Furdyna, J.K. ; Dong Uk Lee ; Eun Kyu Kim
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
Volume :
50
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
1
Lastpage :
4
Abstract :
We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.
Keywords :
III-V semiconductors; aluminium compounds; ferromagnetic materials; gallium arsenide; iron; magnetic anisotropy; magnetic multilayers; manganese compounds; semimagnetic semiconductors; tunnelling magnetoresistance; Fe-GaAlAs-GaMnAs; MTJ device; antiparallel configurations; decimal tunneling magnetoresistance states; ferromagnetic layers; in-plane magnetic easy axes; magnetic tunnel junction; noncollinear magnetic configurations; parallel configurations; strong cubic anisotropies; Iron; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Perpendicular magnetic anisotropy; Tunneling magnetoresistance; Magnetic multilayers; multivalued memory device; tunneling magnetoresistance (TMR);
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2014.2321533
Filename :
6971748
Link To Document :
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