DocumentCode :
729219
Title :
Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope
Author :
Yu-Chien Chiu ; Chun-Hu Cheng ; Chia-Chi Fan ; Po-Chun Chen ; Chun-Yen Chang ; Min-Hung Lee ; Chien Liu ; Shiang-Shiou Yen ; Hsiao-Hsuan Hsu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
41
Lastpage :
42
Abstract :
A nearly ideal subthreshold slope (SSmin ~58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.
Keywords :
ferroelectric storage; hafnium compounds; interface states; zirconium compounds; HfZrO; endurance cycling; ferroelectric memory; interface polarization fluctuation effect; interface states; nanosecond ferroelectric switching; subthreshold slope; Clocks; Fluctuations; High K dielectric materials; Logic gates; Switches; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175543
Filename :
7175543
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=729219
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