Title :
Materials parameter extraction using analytical models in PCMO based RRAM
Author :
Chakraborty, I. ; Singh, A.K. ; Kumbhare, P. ; Panwar, N. ; Ganguly, U.
Author_Institution :
Indian Inst. of Technol., Bombay, Mumbai, India
Abstract :
In this paper, we have present analytical models based extraction of materials parameters for PCMO based RRAM. Based on a trap-SCLC model, the energy and spatial distribution of trap-density is extracted. A single-level trap energy is estimated. The uniform trap density model provides consistent trap density estimated from low bias Ohmic regime as well as high-bias Trap-Filled Limit regime.
Keywords :
calcium compounds; manganese compounds; praseodymium compounds; resistive RAM; silicon compounds; PCMO based RRAM; Pr0.7Ca0.3MnO; SiO2-Si; high-bias trap-filled limit regime; low bias Ohmic regime; materials parameter extraction; single-level trap energy; spatial distribution; trap-SCLC model; trap-density; uniform trap density model; Electrodes; Electrostatics; Numerical analysis; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175568
