Title :
Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges
Author :
Di Lecce, Valerio ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio
Author_Institution :
DEI, Univ. of Bologna, Bologna, Italy
Abstract :
We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.
Keywords :
CMOS integrated circuits; Ge-Si alloys; graphene devices; heterojunction bipolar transistors; semiconductor device models; Si GBHT; SiGe; SiGe HBT; fT limit; post-CMOS high-speed applications; realistic interface model; transparent graphene-Si interface; Doping; Graphene; Heterojunction bipolar transistors; Schottky diodes; Silicon; Solids;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175570
