• DocumentCode
    729235
  • Title

    Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges

  • Author

    Di Lecce, Valerio ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio

  • Author_Institution
    DEI, Univ. of Bologna, Bologna, Italy
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; graphene devices; heterojunction bipolar transistors; semiconductor device models; Si GBHT; SiGe; SiGe HBT; fT limit; post-CMOS high-speed applications; realistic interface model; transparent graphene-Si interface; Doping; Graphene; Heterojunction bipolar transistors; Schottky diodes; Silicon; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175570
  • Filename
    7175570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729235