Title :
Out-of-plane strain effect on silicon-based flexible FinFETs
Author :
Ghoneim, Mohamed T. ; Alfaraj, Nasir ; Torres Sevilla, Galo A. ; Fahad, Hossain M. ; Hussain, Muhammad M.
Author_Institution :
Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Abstract :
Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Keywords :
MOSFET; dielectric materials; flexible electronics; hafnium compounds; silicon; tensile strength; HfO4Si; channel length; compressive stress; flexible FinFET; hafnium silicate; high-k gate dielectric; out-of-plane strain effect; out-of-plane stresses; silicon; tensile stress; ultra-thin inorganic solid state substrates; Artificial intelligence; Logic gates; Stress; Surface treatment;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175572
