Title :
Gated van der Pauw measurements: A powerful tool for probing electron trapping effects in GaN HEMTs
Author :
Mehari, Shlomo ; Gavrilov, Arkady ; Eizenberg, Moshe ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
Gated van der Pauw structures can be used to distinguish between different trapping effects in AlGaN/GaN HEMT layers, and evaluate trap density. Activation energies can also be obtained [2]. The absence of transistor access region effects greatly simplifies the interpretation of the data compared to transistor pulsed I-V experiments.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; HEMT; activation energy; electron trapping; gated van der Pauw measurements; trap density; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; Logic gates; MODFETs; Transient analysis;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175587
