DocumentCode :
729261
Title :
The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface
Author :
Yacoub, H. ; Eickelkamp, M. ; Fahle, D. ; Mauder, C. ; Alam, A. ; Heuken, M. ; Kalisch, H. ; Vescan, A.
Author_Institution :
GaN Device Technol., RWTH Aachen Univ., Aachen, Germany
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
175
Lastpage :
176
Abstract :
In recent years, GaN grown on silicon substrates (GaN-on-Si) managed to offer a commercial solution for harvesting the advantages of GaN-based devices whilst benefiting from the well-established silicon-based infrastructure. Although having an upper hand when it comes to cost, GaN-on-Si suffers from a vertical breakdown voltage which was found to be limited by the silicon substrate [1]. Earlier investigations showed that this breakdown is related to the formation of an inversion channel at the interface between the nucleation layer and the silicon substrate [2, 3]. This inversion layer acts as a source for electron injection during the application of high positive voltages relative to the substrate, thus leading to a premature breakdown. In this work we report on the characterization of this inversion channel and demonstrate that it can be suppressed by optimizing the growth conditions of the AlN nucleation layer. To obtain a deeper understanding of the inversion layer properties, two MOCVD AlN nucleation samples were grown on highly p-doped Silicon substrates, growth temperatures between 800 °C and 950 °C, while the desorption temperature was held at 950 °C. Vertical structures were then etched, with annealed Ti/Al/Ni/Au as ohmic contact to the silicon and Ni/Au Schottky contact to the AlN.
Keywords :
III-V semiconductors; MOCVD; Schottky barriers; aluminium; aluminium compounds; annealing; desorption; electric breakdown; elemental semiconductors; etching; gold; nickel; nucleation; ohmic contacts; semiconductor growth; silicon; titanium; wide band gap semiconductors; AlN nucleation growth condition effect; AlN-Si; AlN-silicon interface; GaN-based devices; MOCVD AlN nucleation; Ni-Au; Ni-Au Schottky contact; Ti-Al-Ni-Au; annealed Ti-Al-Ni-Au; desorption temperature; electron injection; etching; growth temperatures; highly p-doped silicon substrates; inversion channel formation; nucleation layer; ohmic contact; positive voltages; premature breakdown; silicon-based infrastructure; temperature 800 degC to 950 degC; vertical breakdown voltage; vertical structures; Capacitance; Capacitance measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175613
Filename :
7175613
Link To Document :
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