Title :
Can bilayer black phosphorus outperform monolayer in field-effect transistors?
Author :
Demin Yin ; Youngki Yoon
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
Summary form only given. We have compared device performance of monolayer and bilayer BP FETs based on atomistic quantum transport simulations. This study reveals that, although monolayer BP FETs are robust against short-channel effects at Lch <; 7 nm, bilayer BP FETs show better on-state performance at longer channel length (e.g., >10 nm) without losing steep switching characteristic. Our benchmark against ITRS 2022 shows that BP FETs are promising for the future high-performance logic devices.
Keywords :
field effect transistors; logic devices; monolayers; phosphorus; semiconductor device models; ITRS 2022; P; atomistic quantum transport simulations; bilayer BP FET; bilayer black phosphorus; channel length; field-effect transistors; logic devices; monolayer BP FET; short-channel effects; steep switching characteristic; Benchmark testing; Effective mass; Field effect transistors; MOS devices; Performance evaluation; Switches;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175614
