Title :
Fabrication of thin-film HfS2 FET
Author :
Kanazawa, T. ; Amemiya, T. ; Ishikawa, A. ; Upadhyaya, V. ; Tsuruta, K. ; Tanaka, T. ; Miyamoto, Y.
Author_Institution :
Dept. Phys. Electron., Tokyo Inst. Technol., Tokyo, Japan
Abstract :
In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.
Keywords :
field effect transistors; hafnium compounds; HfS2; I-V characteristics; channel material; channel thickness; drain current; thin-film FET; Aluminum oxide; Field effect transistors; Gold; Logic gates; Photonic band gap; Silicon; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175643
