DocumentCode :
729296
Title :
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices
Author :
Suryavanshi, Saurabh V. ; Pop, Eric
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
235
Lastpage :
236
Abstract :
Anticipating a push towards circuit applications of field-effect transistors (FETs) with two-dimensional (2D) semiconductors like MoS2, there is a growing need to evaluate such devices at a circuit level. However, early 2D FET models have been either too idealistic or did not address circuit simulation. Here we describe the first SPICE-compatible compact model for realistic simulation of 2D FETs in circuits. The semi-classical model has been developed in Verilog-A and an initial version is available online. In addition to physical rigor, the model has been extensively calibrated against state-of-the-art experimental devices both from our lab and the published literature.
Keywords :
field effect transistors; semiconductor device models; 2-dimensional semiconductor devices; 2D FET models; SPICE-compatible compact model; Verilog-A; circuit applications; circuit level; circuit simulations; field-effect transistors; physics-based compact model; two-dimensional semiconductors; Doping; Metals; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175654
Filename :
7175654
Link To Document :
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