Title :
12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•105 ION/IOFF
Author :
Cheng-Ying Huang ; Choudhary, Prateek ; Sanghoon Lee ; Kraemer, Stephan ; Chobpattana, Varistha ; Thibeault, Brain ; Mitchell, William ; Stemmer, Susanne ; Gossard, Arthur ; Rodwell, Mark
Author_Institution :
ECE Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
We report III-V MOSFETs with 12 nm physical gate length, ultrathin 1.5/1 nm InGaAs/lnAs composite channels, and recessed doping-graded InP SID vertical spacers. The FETs demonstrate gm-1.8 mS/μm transconductance, SS-107 mV/dec., minimum loJj1.3 nA/μm at VDS=0.5 V, and well-balanced on-off DC performance with maximum Ion/loff-8.3x 105. Band-to-band tunneling leakage current is well-controlled through the thin composite InGaAs/lnAs channel, and by the recessed InP source/drain spacers. This work demonstrates that 111-V MOSFETs can scale to the sub-10-nm technology nodes.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; leakage currents; semiconductor doping; tunnelling; III-V MOSFET; InGaAs-InAs; InP; band-to-band tunneling leakage current; recessed doping-graded SID vertical spacers; size 12 nm; ultrathin-body MOSFET; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Logic gates; Nickel;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175669
