Title :
The path to fabricating carbon nanotube array field effect transistors with uniform wafer scale performance suitable for advanced RF applications
Author :
Grubbs, M.E. ; Berghmans, A.E. ; Walker, M.J. ; Lilly, M.P. ; Przybysz, J.X.
Author_Institution :
Adv. Concepts & Technol., Northrop Grumman Corp., Linthicum, MD, USA
Abstract :
One of the benefits of carbon nanotubes (CNTs) is that they are inherently linear at low power.1 This characteristic makes them candidates for high dynamic range RF mixers and amplifiers; however, in order to meet the frequency requirements of 10-25 GHz for these devices, transconductances (Gm) of 5 to 12.5 μS/μm are necessary. These values mean that CNT array FETs with linear densities of 2-5 CNTs per micron are needed. Additionally, the current integration hurdles for CNT arrays are the presence of metallic tubes, which reduce Gm, and device variability across a wafer.
Keywords :
carbon nanotube field effect transistors; microwave amplifiers; microwave mixers; frequency 10 GHz to 25 GHz; Field effect transistors; Mixers; Performance evaluation; Radio frequency;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175679
