Title :
Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI
Author :
Agrawal, Nidhi ; Agrawal, Ashish ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Datta, Suman
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
We perform a comparative study of Negative Bias Temperature Instability (NBTI) reliability on compressively strained Germanium (s-Ge) Quantum Well (QW) Planar and FinFET p-type devices. We see electron trapping from the gate electrode in all these devices with applied negative stress. FinFETs show less ΔVT than Planar but with 1.8 times higher stress time exponent (n) and slower recovery rate than Planar. Also, Δgm/gm0 of FinFETs improves with increasing stress.
Keywords :
MOSFET; germanium; negative bias temperature instability; semiconductor device reliability; semiconductor quantum wells; FinFET devices; Ge; NBTI; electron trapping dominance; gate electrode; negative bias temperature instability reliability; quantum well planar devices; Charge carrier processes; Current measurement; FinFETs; Logic gates; Stress; Stress measurement; Time measurement;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175686
