• DocumentCode
    729323
  • Title

    Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI

  • Author

    Agrawal, Nidhi ; Agrawal, Ashish ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Datta, Suman

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    283
  • Lastpage
    284
  • Abstract
    We perform a comparative study of Negative Bias Temperature Instability (NBTI) reliability on compressively strained Germanium (s-Ge) Quantum Well (QW) Planar and FinFET p-type devices. We see electron trapping from the gate electrode in all these devices with applied negative stress. FinFETs show less ΔVT than Planar but with 1.8 times higher stress time exponent (n) and slower recovery rate than Planar. Also, Δgm/gm0 of FinFETs improves with increasing stress.
  • Keywords
    MOSFET; germanium; negative bias temperature instability; semiconductor device reliability; semiconductor quantum wells; FinFET devices; Ge; NBTI; electron trapping dominance; gate electrode; negative bias temperature instability reliability; quantum well planar devices; Charge carrier processes; Current measurement; FinFETs; Logic gates; Stress; Stress measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175686
  • Filename
    7175686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729323