DocumentCode :
729325
Title :
Low temperature epitaxial germanium P+IN+IP+ selector for RRAM
Author :
Senthil Srinivasan, V.S. ; Das, B. ; Sangwan, V. ; Pinto Gomez, C. ; Oehme, M. ; Ganguly, U. ; Schulze, J.
Author_Institution :
Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
289
Lastpage :
290
Abstract :
Summary form only given. Low temperature (<; 160 °C epi temperature) Ge based punch through selector has been demonstrated with good Ion/Ioff and matched with TCAD results. High Jon verifies the high dopant activation at low temperature. Benchmarking with the available selector technologies, Jon/Joff >104 with voltage designability makes Ge based selector an attractive option for RRAM.
Keywords :
elemental semiconductors; germanium; integrated circuit design; resistive RAM; semiconductor doping; Ge; RRAM; TCAD; dopant activation; low temperature epitaxial germanium P+IN+IP+ selector; punch through selector; selector technologies; voltage designability; Benchmark testing; Current density; ISO standards; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175689
Filename :
7175689
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=729325
بازگشت