Title :
Crystal quality improvement of Gallium Nitride on plane Sapphire by predose method
Author :
Rongjun Zhang ; Yehua Weng ; Zhiyin Gan
Author_Institution :
Sch. of Mech. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
A method that greatly improves the crystal quality of Gallium Nitride grown on plane Sapphire substrate by Metal-organic Chemical Vapor Deposition (MOCVD) was proposed. High level quality of GaN film was obtained on plane Sapphire substrate using this method by adding predose GaN layers before the growth of buffer layer, which is almost comparable to that grown on PSS sapphire substrate.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; semiconductor thin films; wide band gap semiconductors; Al2O3; GaN; MOCVD; buffer layer; crystal quality; gallium nitride; metalorganic chemical vapor deposition; plane sapphire substrate; predose method; Films; Gallium nitride; MOCVD; X-ray scattering;
Conference_Titel :
Solid State Lighting (ChinaSSL), 2013 10th China International Forum on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-2249-9
DOI :
10.1109/SSLCHINA.2013.7177359
