DocumentCode
729679
Title
Crystal quality improvement of Gallium Nitride on plane Sapphire by predose method
Author
Rongjun Zhang ; Yehua Weng ; Zhiyin Gan
Author_Institution
Sch. of Mech. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2013
fDate
10-12 Nov. 2013
Firstpage
245
Lastpage
246
Abstract
A method that greatly improves the crystal quality of Gallium Nitride grown on plane Sapphire substrate by Metal-organic Chemical Vapor Deposition (MOCVD) was proposed. High level quality of GaN film was obtained on plane Sapphire substrate using this method by adding predose GaN layers before the growth of buffer layer, which is almost comparable to that grown on PSS sapphire substrate.
Keywords
III-V semiconductors; MOCVD; gallium compounds; semiconductor thin films; wide band gap semiconductors; Al2O3; GaN; MOCVD; buffer layer; crystal quality; gallium nitride; metalorganic chemical vapor deposition; plane sapphire substrate; predose method; Films; Gallium nitride; MOCVD; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Lighting (ChinaSSL), 2013 10th China International Forum on
Conference_Location
Beijing
Print_ISBN
978-1-4799-2249-9
Type
conf
DOI
10.1109/SSLCHINA.2013.7177359
Filename
7177359
Link To Document