Title :
Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length
Author :
Yi-Ruei Jhan ; Yung-Chun Wu ; Min-Feng Hung
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This letter describes an asymmetric gate tunnel field-effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain. It has a low OFF-state current (6.55 ×10-16 A/μm) and a high ON-state current (2.47 ×10-5 A/μm) because the screening length λ of a GAA nanowire structure is half that of the planar structure. Simulations reveal that a subthreshold swing as low as 42 mV/decade and an ON/OFF current ratio as high as 1010 are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication.
Keywords :
field effect transistors; nanoelectronics; nanowires; tunnel transistors; AG-TFET; GAA nanowire structure; asymmetric gate tunnel field-effect transistor; gate-all-around structure; general TFET fabrication; high ON-state current; low OFF-state current; nanowire tunnel field-effect transistor; planar structure; screening length; source structure; CMOS integrated circuits; Field effect transistors; Nanowires; Performance evaluation; Silicon; Tunneling; Asymmetry gate; band-to-band tunneling (BTBT); screening length $(lambda)$; tunnel field-effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2285156
