Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

Author

Yi-Ruei Jhan ; Yung-Chun Wu ; Min-Feng Hung

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1482

Lastpage

1484

Abstract

This letter describes an asymmetric gate tunnel field-effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain. It has a low OFF-state current (6.55 ×10^-16 A/μm) and a high ON-state current (2.47 ×10^-5 A/μm) because the screening length λ of a GAA nanowire structure is half that of the planar structure. Simulations reveal that a subthreshold swing as low as 42 mV/decade and an ON/OFF current ratio as high as 10¹⁰ are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication.

Keywords

field effect transistors; nanoelectronics; nanowires; tunnel transistors; AG-TFET; GAA nanowire structure; asymmetric gate tunnel field-effect transistor; gate-all-around structure; general TFET fabrication; high ON-state current; low OFF-state current; nanowire tunnel field-effect transistor; planar structure; screening length; source structure; CMOS integrated circuits; Field effect transistors; Nanowires; Performance evaluation; Silicon; Tunneling; Asymmetry gate; band-to-band tunneling (BTBT); screening length $(lambda)$; tunnel field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2285156

Filename

6650066