Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use

Author

Sato, Shin-ichiro ; Beernink, Kevin ; Ohshima, Takeshi

Author_Institution

Japan Atomic Energy Agency, Takasaki, Japan

fYear

2013

fDate

16-21 June 2013

Abstract

Performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of silicon ions., high-energy electrons, and protons are investigated using an in-situ current-voltage measurement system. The room temperature (RT) annealing effects immediately after irradiation are also investigated and the significant RT annealing is always observed independent of radiation species. By analyzing the energy loss process of incident particles (ionizing energy loss and non-ionizing energy loss), the radiation degradation mechanism is discussed. It is concluded that both the ionizing energy loss and the non-ionizing energy loss contribute the degradation.

Keywords

Ge-Si alloys; radiation hardening (electronics); semiconductor junctions; solar cells; Si-SiGe-SiGe; charged particle radiation effect; current-voltage measurement system; high-energy electrons; high-energy protons; radiation degradation; radiation species; room temperature annealing; silicon ion irradiation; triple junction solar cells; Degradation; IEL; Ions; Photovoltaic cells; Protons; Radiation effects; Silicon; amorphous semiconductors; ion radiation effects; photovoltaic cells; radiation hardening;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), PART 2, 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC-Vol2.2013.7179251

Filename

7179251