DocumentCode
73104
Title
Modelling hysteresis in vanadium dioxide oscillators
Author
Maffezzoni, P. ; Daniel, L. ; Shukla, N. ; Datta, S. ; Raychowdhury, A. ; Narayanan, V.
Author_Institution
Politec. di Milano, Milan, Italy
Volume
51
Issue
11
fYear
2015
fDate
5 28 2015
Firstpage
819
Lastpage
820
Abstract
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.
Keywords
hysteresis; nanoelectronics; relaxation oscillators; vanadium compounds; VO2; bio-inspired neurocomputing; compact relaxation nanooscillator; electron devices; electronic hysteresis; original circuit level model; oscillator hysteresis;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.0025
Filename
7110774
Link To Document