DocumentCode :
73104
Title :
Modelling hysteresis in vanadium dioxide oscillators
Author :
Maffezzoni, P. ; Daniel, L. ; Shukla, N. ; Datta, S. ; Raychowdhury, A. ; Narayanan, V.
Author_Institution :
Politec. di Milano, Milan, Italy
Volume :
51
Issue :
11
fYear :
2015
fDate :
5 28 2015
Firstpage :
819
Lastpage :
820
Abstract :
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.
Keywords :
hysteresis; nanoelectronics; relaxation oscillators; vanadium compounds; VO2; bio-inspired neurocomputing; compact relaxation nanooscillator; electron devices; electronic hysteresis; original circuit level model; oscillator hysteresis;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2015.0025
Filename :
7110774
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=73104
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