Title :
Highly reconfigurable Aluminum Nitride MEMS resonator using 12 monolithically integrated phase change material switches
Author :
Hummel, G. ; Hui, Y. ; Rinaldi, M.
Author_Institution :
Northeastern Univ., Boston, MA, USA
Abstract :
This paper presents the first demonstration of a frequency reconfigurable and programmable Aluminum Nitride (AlN) piezoelectric MEMS resonator using phase change material (PCM) based switchable electrodes. For the first time, 12 miniaturized (2 μm×2 μm) PCM switches are monolithically integrated with an AlN MEMS resonator and used to reconfigure the terminal connections of the individual metal fingers composing the device interdigital transducer (IDT). This innovative design solution provides high ON/OFF ratio switching of the acoustic resonance (~28X impedance variation at resonance), and reconfiguration of the device electromechanical coupling (kt2: 0-1.32%), capacitance (C: 125-1,134 fF), and operating frequency (f1~181.3 MHz, f2~385.4 MHz).
Keywords :
III-V semiconductors; acoustic resonance; aluminium compounds; crystal resonators; electrodes; interdigital transducers; micromechanical resonators; microswitches; monolithic integrated circuits; phase change materials; wide band gap semiconductors; AlN; IDT; PCM switch; acoustic resonance; electromechanical coupling; interdigital transducer; microelectromechanical system; monolithically integrated phase change material switch; on-off ratio switching; piezoelectric MEMS resonator; reconfigurable aluminum nitride MEMS resonator; switchable electrode; Aluminum nitride; Electrodes; III-V semiconductor materials; Micromechanical devices; Phase change materials; Resonant frequency; Resonator filters; Aluminum Nitride; Contour-Mode Resonator; Phase Change Materials; Reconfigurable Resonator;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7180926