A novel MOS radiation dosimeter based on the MEMS-made oxide layer

Author

Liu, H. ; Yang, Y. ; Zhang, J.

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2015

fDate

21-25 June 2015

Firstpage

1156

Lastpage

1159

Abstract

This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5μm containing multiple and large interfaces. Our devices were irradiated by γ-rays of ⁶⁰Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158μC and sensitivity of 5.5nC/mm²·Gy, which is 40 times the sensitivity of previous MOS dosimeters.

Keywords

bioMEMS; biomedical equipment; chemical vapour deposition; dosimeters; microfabrication; oxidation; ⁶⁰Co gamma-rays; LPCVD; MEMS technology; MEMS-made oxide layer; MOS dosimeter; TSC charge; deep-reactive-ion etching thermal oxidation; dosimeter readout; radiation dosimeter; thermally stimulated current method; Capacitance-voltage characteristics; Current measurement; Electron traps; Fabrication; Semiconductor device measurement; Sensitivity; MEMS-made SiO2; MOS dosimeter; TSC; high sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181133

Filename

7181133