DocumentCode
731886
Title
Simulation of microloading and ARDE in DRIE
Author
Gosalvez, M.A. ; Zhou, Y. ; Zhang, Y. ; Zhang, G. ; Li, Y. ; Xing, Y.
Author_Institution
Dept. of Mater. Phys., Univ. of the Basque Country UPV/EHU, San Sebastian, Spain
fYear
2015
fDate
21-25 June 2015
Firstpage
1255
Lastpage
1258
Abstract
An atomisitic etching model is combined with a continuum concentration solver in order to realistically simulate various effects during Deep Reactive Ion Etching (DRIE or the Bosch process). This includes microloading (or loading effect) and Aspect Ratio Dependent Etching (ARDE or lag effect). The model strongly differs from the current simulation approaches in which the local etch rate depends markedly on complex visibility integrals over the ion and neutral fluxes. Instead, we focus on the description of the etchant depletion.
Keywords
semiconductor technology; sputter etching; ARDE; Bosch process; DRIE; aspect ratio dependent etching; atomisitic etching model; deep reactive ion etching; lag effect; microloading; Etching; Ions; Mathematical model; Polymers; Silicon; Solid modeling; Aspect Ratio Dependent Etching; Deep Reactive Ion Etching; diffusion; loading; microloading; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location
Anchorage, AK
Type
conf
DOI
10.1109/TRANSDUCERS.2015.7181158
Filename
7181158
Link To Document