Aluminium nitride membranes with embedded buried idt electrodes for novel flexural plate wave devices

Author

Reusch, M. ; Katus, P. ; Holc, K. ; Pletschen, W. ; Kirste, L. ; Zuerbig, V. ; Iankov, D. ; Reindl, L. ; Ambacher, O. ; Lebedev, V.

Author_Institution

Univ. of Freiburg - IMTEK, Freiburg, Germany

fYear

2015

fDate

21-25 June 2015

Firstpage

1291

Lastpage

1294

Abstract

Novel flexural plate wave resonators based on bilayer AlN membranes were fabricated and investigated with respect to their piezoelectric response and residual film stress. In the proposed device design, the interdigital transducers (IDTs) are embedded between two AlN films. Here, chromium and aluminum were evaluated as suitable materials for IDT. Using Cr is beneficial with respect to conventional microfabrication technology, whereas Al enhances overall device performance due to enhanced conductivity. Finally, the proof-of-concept Lamb wave resonators were fabricated and characterized by means of laser Doppler vibrometry.

Keywords

III-V semiconductors; aluminium; aluminium compounds; chromium; elastic waves; electrodes; interdigital transducers; microfabrication; surface acoustic wave resonators; vibration measurement; wide band gap semiconductors; AlN; Cr; Lamb wave resonator; aluminium nitride membrane; aluminum; chromium; embedded buried IDT electrode; flexural plate wave resonator; interdigital transducer; laser Doppler vibrometry; microfabrication technology; piezoelectric response; residual film stress; Aluminum nitride; Electrodes; Films; III-V semiconductor materials; Sensors; Silicon; Stress; Aluminum nitride; Lamb wave resonators; acoustic transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181167

Filename

7181167