A unified epi-seal process for resonators and inertial sensors

Author

Yang, Yushi ; Ng, Eldwin J. ; Yunhan Chen ; Flader, Ian B. ; Ahn, Chae Hyuck ; Hong, Vu A. ; Kenny, Thomas W.

Author_Institution

Stanford Univ., Stanford, CA, USA

fYear

2015

fDate

21-25 June 2015

Firstpage

1326

Lastpage

1329

Abstract

A thin-film wafer-level encapsulation process which incorporates both narrow (0.7 μm) and wide (>50 μm) lateral transduction gaps, in-plane and out-of-plane electrodes, and does not require release etch-holes is presented. High stability, high quality factor (Q) resonant devices as well as inertial sensors are fabricated in the process. The great diversity of functioning devices built in this process demonstrates the potential for combinations of high-performance MEMS devices in a single process and even in single chips.

Keywords

Q-factor; encapsulation; micromechanical devices; resonators; sensors; wafer level packaging; in-plane electrodes; inertial sensors; lateral transduction gaps; out-of-plane electrodes; quality factor; resonators; size 0.7 mum; stability; thin-film wafer-level encapsulation process; unified epi-seal process; Electrodes; Encapsulation; Fabrication; Micromechanical devices; Performance evaluation; Sensors; Silicon; Epi-seal process; Fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181176

Filename

7181176