Title :
Large figure-of-merit epitaxial Pb(Mn,Nb)O3-Pb(Zr,Ti)O3/Si transducer for piezoelectric MEMS sensors
Author :
Hanzawa, Hiroaki ; Yoshida, Shinya ; Wasa, Kiyotaka ; Tanaka, Shuji
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
A large figure-of-merit (FOM) piezoelectric transducer has been developed based on a Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 (PMnN-PZT) epitaxial thin film on a Si substrate for MEMS (Micro Electro Mechanical Systems) sensors such as vibratory gyroscopes. A c-axis oriented PMnN-PZT thin film was epitaxially grown on a Si substrate covered with buffer layers by sputter deposition with fast cooling. This film has excellent properties of a large piezoelectric coefficient (e31,f, ~-14 C/m2), a small dielectric constant (εr33, ~200), and high Curie temperature (Tc, >500°C) compared to PZT-based bulk ceramics. The calculated FOM for piezoelectric MEMS gyroscopes reached 110 GPa, which is 5 times larger than those of conventional PZT polycrystalline thin films. We believe that the epitaxial PMnN-PZT/Si transducer has a great potential for high performance piezoelectric gyroscopes.
Keywords :
Curie temperature; buffer layers; gyroscopes; lead compounds; manganese compounds; microsensors; niobium compounds; piezoelectric thin films; piezoelectric transducers; silicon; sputter deposition; thin film sensors; titanium compounds; zirconium compounds; Curie temperature; FOM; PMnN-PZT epitaxial thin film; Pb(MnNb)O3-Pb(ZrTi)O3-Si; buffer layers; epitaxial transducer; figure-of-merit; microelectromechanical systems sensors; piezoelectric MEMS gyroscopes; piezoelectric MEMS sensors; piezoelectric transducer; polycrystalline thin films; sputter deposition; vibratory gyroscopes; Epitaxial growth; Gyroscopes; Piezoelectric polarization; Sensors; Silicon; Substrates; Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 epitaxial thin film; piezoelectric MEMS gyroscope;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7181179