DocumentCode :
732026
Title :
Silicon-to-silicon microswitch with wide operation temperature range
Author :
Bo Woon Soon ; You Qian ; Ng, Eldwin J. ; Kenny, Thomas W. ; Chengkuo Lee
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2015
fDate :
21-25 June 2015
Firstpage :
2105
Lastpage :
2108
Abstract :
Using an ultra-clean vacuum sealing process, an encapsulated Si-to-Si contact micro switch is fabricated and characterized. This three-terminal micro switch relies on a curved beam (source) that actuates toward the contact terminal (drain) by charging the control terminal (gate). We report the temperature stability of this switch from -60 °C to 300 °C, which yields a resistance drift of -196 Ω/K. Meanwhile, through continuous on-off cycles, the operating lifetime in high temperature environment is investigated. Microswitches of more than 106 cycles lifetime at 400 °C are successfully demonstrated. The study of such Si-to-Si contact-based micro switches provides a crucial guideline to the field of mechanical and electrical failure mechanisms for harsh environment applications.
Keywords :
encapsulation; microswitches; seals (stoppers); silicon; Si; contact terminal; control terminal; curved beam; electrical failure mechanism; encapsulation; on-off cycle; resistance drift; silicon-to-silicon microswitch; temperature -60 C to 300 C; temperature 400 C; temperature stability; three-terminal microswitch; ultraclean vacuum sealing process; wide operation temperature range; Contact resistance; Logic gates; Microswitches; Resistance; Silicon; Actuator; MEMS switch; harsh environment electronics; microswitch; rugged electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
Type :
conf
DOI :
10.1109/TRANSDUCERS.2015.7181373
Filename :
7181373
Link To Document :
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