Optimized temperature profile based pulse generator for innovative Phase Change Memory

Author

Kiouseloglou, Athanasios ; Navarro, Gabriele ; Cabrini, Alessandro ; Perniola, Luca ; Torelli, Guido

Author_Institution

LETI, CEA, Grenoble, France

fYear

2015

fDate

7-10 June 2015

Firstpage

1

Lastpage

4

Abstract

In this paper, we discuss the increase of the SET state resistance distribution dispersion in Phase Change Memory (PCM) based on innovative materials, namely Ge-rich Ge₂Sb₂Te₅ (GST). A new programming technique, which consists in linearly decreasing the temperature in the active region of the memory device, is studied and a circuit capable of generating the desired pulse is presented and simulated. Post-layout simulations demonstrate the functionality of the circuit and its potential to be used for the programming of PCM cells based on alternative-to-GST materials.

Keywords

antimony compounds; germanium compounds; phase change memories; pulse generators; Ge-rich Ge2Sb2Te5; Ge₂Sb₂Te₆; PCM cells programming; SET state resistance distribution dispersion; alternative-to-GST materials; innovative materials; phase change memory; post-layout simulations; temperature profile based pulse generator; Crystallization; Dispersion; Phase change materials; Phase change memory; Programming; Pulse generation; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International

Conference_Location

Grenoble

Type

conf

DOI

10.1109/NEWCAS.2015.7181990

Filename

7181990