DocumentCode :
732238
Title :
High resolution, low offset Vertical Hall device in low-voltage CMOS technology
Author :
Osberger, Laurent ; Frick, Vincent ; Madec, Morgan ; Hebrard, Luc
Author_Institution :
ICube Lab., Univ. of Strasbourg, Strasbourg, France
fYear :
2015
fDate :
7-10 June 2015
Firstpage :
1
Lastpage :
4
Abstract :
Vertical Hall-effect devices (VHDs) are CMOS integrated sensors dedicated to the measurement of magnetic field in the plane of the chip. At low frequency performances are severely reduced by the 1/f noise. We recently proposed a theoretical study which confirm the capability of the spinning current technique to lower the 1/f noise on Low-Voltage VHD. In this paper, we proposed a practical way for the implementation of this technique. Experimental results bring out significant improvements. An offset of 0.1 mT and a resolution of 37 μT has been measured over a 1.6 kHz bandwidth.
Keywords :
1/f noise; CMOS integrated circuits; low-power electronics; magnetic fields; magnetic sensors; 1/f noise; CMOS integrated sensors; Vertical Hall-effect devices; bandwidth 1.6 kHz; low-voltage CMOS technology; magnetic field; spinning current technique; CMOS integrated circuits; CMOS technology; Magnetic sensors; Noise; Sensitivity; Spinning; CMOS technology; Vertical Hall Device; low noise; low offset; magnetic sensor; spinning current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/NEWCAS.2015.7182008
Filename :
7182008
Link To Document :
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