• DocumentCode
    732240
  • Title

    A single photon avalanche detector in a 180 nm standard CMOS technology

  • Author

    Malass, Imane ; Uhring, Wilfried ; Le Normand, Jean-Pierre ; Dumas, Norbert ; Dadouche, Foudil

  • Author_Institution
    Univ. of Strasbourg, Strasbourg, France
  • fYear
    2015
  • fDate
    7-10 June 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present the performance characteristics of a Single Photon Avalanche Detector fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented in 8 different diameters between 5 μm and 40 μm shows a DCR below 10 kHz at 15°C with a low afterpulsing probability (0.2% at 300 mV), a good photodetection efficiency (20%) and a very good time resolution (80 ps at 450 nm).
  • Keywords
    CMOS image sensors; photodetectors; afterpulsing probability; dark count rate; single photon avalanche detector; size 180 nm; size 5 mum to 40 mum; standard CMOS image sensor technology; temperature 15 degC; CMOS integrated circuits; CMOS technology; Noise; Photonics; Standards; Temperature measurement; Time measurement; Avalanche Photodiodes; CMOS image sensor; Photodetector; SPAD; Single Photon Avalanche Diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2015.7182011
  • Filename
    7182011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732240