Title :
Impact of short-channel effects on velocity overshoot in MOSFET
Author :
Hiblot, Gaspard ; Rafhay, Quentin ; Boeuf, Frederic ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this work, the impact of short-channel effects on velocity overshoot is discussed. Hydrodynamic simulations are first performed to investigate the overshoot behavior under a uniform electric field. Then a spatially varying electric field, which corresponds to the electric field profile in a MOSFET in inversion, is introduced to observe the impact of short-channel effects on velocity overshoot. Finally, SPICE simulations of a ring-oscillator are used to analyze how the combined influence of overshoot and short-channel effects affect the performance of downscaled CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; CMOS technology; MOSFET; SPICE simulations; ring-oscillator; short-channel effects; uniform electric field; velocity overshoot; Integrated circuit modeling; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Solid modeling; DIBL; Saturation velocity; velocity overshoot;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
DOI :
10.1109/NEWCAS.2015.7182061
