Temperature-dependent characterization of G0.94Sn0.06 light-emitting diode grown on Si via CVD

Author

Ghetmiri, Seyed Amir ; Wei Du ; Yiyin Zhou ; Margetis, Joe ; Pham, Thach ; Mosleh, Aboozar ; Conley, Benjamin R. ; Nazzal, Amjad ; Sun, Greg ; Soref, Richard ; Tolle, John ; Naseem, Hameed A. ; Baohua Li ; Shui-Qing Yu

Author_Institution

Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA

fYear

2015

fDate

10-15 May 2015

Firstpage

1

Lastpage

2

Abstract

Temperature-dependent electroluminescence from a double heterostructure n-Ge/i-Ge_0.94Sn_0.06/p-Ge LED was studied. The peak position of EL spectra showed a blue-shift as the temperature decreased. A maximum emission power of 7 mW was obtained under the current density of 800 A/cm².

Keywords

chemical vapour deposition; current density; electroluminescence; germanium; germanium compounds; light emitting diodes; light sources; optical multilayers; silicon; spectral line shift; CVD; EL spectra; Ge-Ge_0.94Sn_0.06-Ge; Si; blue-shift; current density; double heterostructure n-Ge/i-Ge_0.94Sn_0.06/p-Ge LED; light-emitting diode; maximum emission power; power 7 mW; temperature-dependent characterization; temperature-dependent electroluminescence; Electroluminescence; Light emitting diodes; Optical buffering; Photonic band gap; Photonics; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2015 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

7182939