DocumentCode
732637
Title
Femtosecond hole relaxation and biexcitonic transient absorption in single CdSe/ZnSe quantum dots
Author
Hinz, C. ; Traum, C. ; Haase, J. ; Bauer, B. ; Leitenstorfer, A. ; Seletskiy, D.V.
Author_Institution
Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Femtosecond few-fermion dynamics in single CdSe/ZnSe quantum dots is studied by two-color pump-probe measurements. We observe sub-picosecond hole relaxation and induced absorption into biexciton states when pumping p-p and d-s transitions.
Keywords
II-VI semiconductors; biexcitons; cadmium compounds; carrier relaxation time; fermion systems; high-speed optical techniques; optical pumping; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; CdSe-ZnSe; biexciton states; biexcitonic transient absorption; d-s transitions; femtosecond few-fermion dynamics; femtosecond hole relaxation; p-p transitions; single quantum dots; subpicosecond hole relaxation; two-color pump-probe measurements; Absorption; Cadmium compounds; Delay effects; II-VI semiconductor materials; Quantum dots; Trions; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183073
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