DocumentCode
732652
Title
Photoluminescence upconversion study of GaN nanowires: Potential for optical refrigeration
Author
Ruolin Chen ; Guan Sun ; Ding, Yujie J. ; Nguyen, Hieu P. T. ; Zetian Mi
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Up-converted photoluminescence of GaN nanowires is observed at the temperature above 375 K. At 475 K, the mechanism of the photoluminescence was identified as phonon-assisted bandtail emission. Such a phenomenon contributes to optical refrigeration.
Keywords
III-V semiconductors; gallium compounds; laser cooling; nanowires; photoluminescence; wide band gap semiconductors; GaN; nanowires; optical refrigeration; phonon-assisted bandtail emission; photoluminescence upconversion; temperature 475 K; Cooling; Gallium nitride; Laser excitation; Nanowires; Phonons; Photoluminescence; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183088
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