Title :
Manipulating the valley pseudospin in MoS2 transistors
Author_Institution :
Penn State Univ., University Park, PA, USA
Abstract :
Summary form only given. Monolayer MoS2 possess a new valley-pseudospin degree of freedom besides electronic charge and spin. In this talk I will talk about our recent results on optical generation of valley polarization, based on which a novel Hall effect associated with the new degree of freedom is demonstrated. The mechanisms responsible for driving the new valley Hall effect will be discussed.
Keywords :
Hall effect; light polarisation; molybdenum compounds; monolayers; nanophotonics; nanostructured materials; optical materials; phototransistors; semiconductor materials; MoS2 transistors; MoS2; electronic charge; electronic spin; monolayer MoS2; optical generation; valley Hall effect; valley polarization; valley pseudospin; valley-pseudospin degree of freedom; Hall effect; Nanoscale devices; Nanostructured materials; Optical devices; Optical materials; Optical polarization; Transistors;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
