DocumentCode :
732715
Title :
Silicon carbide microresonators with high optical Q and large Kerr nonlinearity for nonlinear optics
Author :
Xiyuan Lu ; Lee, Jonathan Y. ; Rogers, Steven ; Qiang Lin
Author_Institution :
Dept. of Phys. & Astron., Univ. of Rochester, Rochester, NY, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate an amorphous silicon carbide (a-SiC) microresonator with optical Q up to 1.3 × 105. This enables us to characterize the third-order nonlinearity of a-SiC with n2 = (5.9 ± 0.7) × 10-15 cm2/W in the telecom band.
Keywords :
Q-factor; amorphous semiconductors; micro-optics; microcavities; optical Kerr effect; optical resonators; silicon compounds; wide band gap semiconductors; Kerr nonlinearity; SiC; amorphous silicon carbide microresonators; high optical Q; nonlinear optics; telecom band; third order nonlinearity; Nonlinear optics; Optical device fabrication; Optical modulation; Optical pumping; Probes; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183151
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=732715
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