Title :
Nondegenerate two-photon gain in GaAs
Author :
Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.
Author_Institution :
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
Abstract :
We present data indicating two-photon gain using extremely nondegenerate (END) photons in optically excited GaAs. These results are consistent with our demonstration of END two-photon absorption enhancement and points a possible way to two-photon lasing.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor lasers; two-photon processes; END two-photon absorption enhancement; GaAs; extremely nondegenerate photons; optically excited GaAs; two-photon gain; two-photon lasing; Delays; Gallium arsenide; Optical polarization; Photonics; Probes; Sociology; Statistics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
