DocumentCode :
73283
Title :
The Desired Memristor for Circuit Designers
Author :
Kvatinsky, Shahar ; Friedman, Eby G. ; Kolodny, Avinoam ; Weiser, Uri C.
Author_Institution :
Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
13
Issue :
2
fYear :
2013
fDate :
Secondquarter 2013
Firstpage :
17
Lastpage :
22
Abstract :
Memristors are two-terminal devices with varying resistance, where the behavior is dependent on the history of the device. In recent years, different physical phenomena of resistive switching have been linked with the theoretical concept of a memristor, and several emerging memory devices (e.g., Phase Change Memory, Resistive RAM, STT-MRAM) are now considered as memristors. Memristors hold promise for use in diverse applications such as memory, digital logic, analog circuits, and neuromorphic systems. Important characteristics of memristors include high speed, low power, good scalability, data retention, endurance, and compatibility with conventional CMOS in terms of manufacturing and operating voltages. One interesting property of some memristors is a nonlinear response to current or voltage. Nonlinear memristors exhibit a current or voltage threshold, such that the resistance is affected only by currents or voltages which exceed the threshold, while the resistance of a linear memristor changes with small perturbations in device current. Different applications exploit different characteristics of a memristor. In this article, the desired characteristics for different applications are presented from the viewpoint of an integrated circuit designer. Understanding the desired characteristics for different applications can assist device and material engineers in providing the appropriate behavior when developing memristive devices, thereby optimizing these devices for different applications.
Keywords :
CMOS integrated circuits; memristors; perturbation techniques; switching circuits; circuit design; conventional CMOS; memristor; nonlinear response; perturbations; physical phenomena; resistive switching; varying resistance; High speed techniques; History; Low power electronics; Memristors; Phase change memory; Random access memory; Resistahce; Resistors; Switches;
fLanguage :
English
Journal_Title :
Circuits and Systems Magazine, IEEE
Publisher :
ieee
ISSN :
1531-636X
Type :
jour
DOI :
10.1109/MCAS.2013.2256257
Filename :
6518267
Link To Document :
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