• DocumentCode
    732973
  • Title

    Power scaling of femtosecond Ti:Sapphire laser double-side-pumped by high-power green InGaN diode lasers

  • Author

    Sawada, Ryota ; Tanaka, Hiroki ; Kariyama, Ryosuke ; Hirosawa, Kenichi ; Kannari, Fumihiko

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.
  • Keywords
    III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; laser mode locking; optical pumping; sapphire; solid lasers; titanium; wide band gap semiconductors; Al2O3:Ti; InGaN; double-side-pumping; femtosecond Ti:sapphire laser; high-power green InGaN diode lasers; laser power; mode-locked Ti:sapphire laser; power 50 mW; power scaling; Absorption; Cavity resonators; Crystals; Diode lasers; Laser beams; Laser excitation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732973