Title :
GaN-based ridge waveguides with very smooth and vertical sidewalls by ICP dry etching and chemical etching
Author :
Wanyong Li ; Yi Luo ; Bing Xiong ; Changzheng Sun ; Lai Wang ; Jian Wang ; Yanjun Han ; Jianchang Yan ; Tongbo Wei ; Hongxi Lu
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated with combined inductively coupled plasma (ICP) etching and chemical etching. Reduction in scattering loss is estimated to be 2 dB/mm at 1.55 μm.
Keywords :
III-V semiconductors; gallium compounds; optical fabrication; optical losses; optical waveguides; ridge waveguides; sputter etching; GaN; GaN-based ridge waveguides; ICP dry etching; chemical etching; inductively coupled plasma etching; scattering loss reduction; wavelength 1.55 mum; Chemicals; Dry etching; Iterative closest point algorithm; Optical device fabrication; Optical resonators; Optical waveguides;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
