• DocumentCode
    732996
  • Title

    Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

  • Author

    Po-Hsun Chen ; Su, Vin-Cent ; Ming-Lun Lee ; Han-Bo Yang ; Yao-Hong You ; Yen-Pu Chen ; Zheng-Hung Hung ; Ta-Cheng Hsu ; Yu-Yao Lin ; Ray-Ming Lin ; Chieh-Hsiung Kuan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; nanopatterning; sapphire; semiconductor quantum wells; Al2O3; DPSS; InGaN-GaN-Al2O3; LED; MQW; dry-etched patterned sapphire substrates; light emitting diodes; multiple quantum wells; nanopatterned sapphire substrates; nanosized periods; residual compressive strain; strain relaxation; Cascading style sheets; Gallium nitride; Light emitting diodes; Quantum well devices; Simulation; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732996