Title :
High-index-contrast grating mirrors implemented on the polysilicon gates of a standard bulk CMOS process
Author :
Yung-Jr Hung ; Ming-Chun Hsieh
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
High-index-contrast grating implemented in bulk CMOS can provide 95% surface reflectivity with 50 nm bandwidth for TE polarization. Higher reflectivity is achievable by creating air cavities beneath HCGs to avoid the optical leakage to the substrate.
Keywords :
CMOS integrated circuits; diffraction gratings; elemental semiconductors; integrated optics; light polarisation; mirrors; reflectivity; refractive index; silicon; Si; TE polarization; air cavities; bulk CMOS process; high-index-contrast grating mirrors; polysilicon gates; surface reflectivity; wavelength 50 nm; Electron optics; Optimized production technology; Photonics; Sun;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
