Title :
Photocurrent density enhancement of a III-V inverse quantum dot intermediate band gap photovoltaic device
Author :
Jeong Dong Kim ; Xiaogang Chen ; Xiuling Li ; Coleman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
We measured the photocurrent density of quantum well (QW) and inverse quantum dot (IQD) photovoltaic devices. The photocurrent per unit area of IQD was enhanced as the carrier confinement became stronger with increasing diameter.
Keywords :
III-V semiconductors; infrared detectors; optical testing; photodetectors; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; III-V inverse quantum dot intermediate band gap photovoltaic device; photocurrent density enhancement; photocurrent density measurement; quantum well; Arrays; Gallium arsenide; Nonhomogeneous media; Photoconductivity; Photovoltaic systems; Quantum computing;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
