• DocumentCode
    733133
  • Title

    Photocurrent density enhancement of a III-V inverse quantum dot intermediate band gap photovoltaic device

  • Author

    Jeong Dong Kim ; Xiaogang Chen ; Xiuling Li ; Coleman, J.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We measured the photocurrent density of quantum well (QW) and inverse quantum dot (IQD) photovoltaic devices. The photocurrent per unit area of IQD was enhanced as the carrier confinement became stronger with increasing diameter.
  • Keywords
    III-V semiconductors; infrared detectors; optical testing; photodetectors; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; III-V inverse quantum dot intermediate band gap photovoltaic device; photocurrent density enhancement; photocurrent density measurement; quantum well; Arrays; Gallium arsenide; Nonhomogeneous media; Photoconductivity; Photovoltaic systems; Quantum computing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733133