DocumentCode
733275
Title
A ZnO/InN/GaN heterojunction photodetector with extended infrared response
Author
Lung-Hsing Hsu ; Shun-Chieh Hsu ; Hsin-Ying Lee ; Yu-Lin Tsai ; Da-Wei Lin ; Hao-Chung Kuo ; Yi-Chia Hwang ; Yin-Han Chen ; Jr-Hau He ; Yuh-Jen Cheng ; Shih-Yen Lin ; Chien-Chung Lin
Author_Institution
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.
Keywords
II-VI semiconductors; III-V semiconductors; MOCVD; gallium compounds; indium compounds; infrared spectra; optical variables measurement; photodetectors; photodiodes; quantum optics; semiconductor growth; semiconductor heterojunctions; zinc compounds; MOCVD; ZnO-InN-GaN; extended infrared photoresponse; external quantum efficiency measurement; wavelength 1200 nm to 1800 nm; zinc oxide-indium nitride-gallium nitride heterojunction diode; zinc oxide-indium nitride-gallium nitride heterojunction photodetector; Gallium nitride; Heterojunctions; II-VI semiconductor materials; Lighting; Photodetectors; Photonics; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183712
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