Title :
Recovery time control in a nanophotonic nonlinear gate using atomic layer deposition
Author :
Moille, Gregory ; Combrie, Sylvain ; Lehoucq, Gaelle ; Morgenroth, Laurence ; Neuilly, Francois ; Decoster, Didier ; de Rossi, Alfredo
Author_Institution :
Thales Res. & Technol. France, Palaiseau, France
Abstract :
Atomic Layer Deposition is used to control the surface recombination of carriers in GaAs photonic crystal cavities. All-optical wavelength conversion at a GHz repetition rate is demonstrated with recovery time below 10 ps.
Keywords :
III-V semiconductors; atomic layer deposition; gallium arsenide; nanophotonics; optical wavelength conversion; photonic crystals; surface recombination; All-optical wavelength conversion; GHz repetition rate; GaAs; GaAs photonic crystal cavity; atomic layer deposition; nanophotonic nonlinear gate; recovery time control; surface carrier recombination; Cavity resonators; Gallium arsenide; Nonlinear optics; Optical surface waves; Optical wavelength conversion; Photonic crystals; Surface treatment;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
