DocumentCode
733370
Title
Effective carrier sweepout in a silicon waveguide by a metal-semiconductor-metal structure
Author
Yunhong Ding ; Hao Hu ; Haiyan Ou ; Oxenlowe, Leif Katsuo ; Yvind, Kresten
Author_Institution
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated.
Keywords
carrier lifetime; elemental semiconductors; metal-semiconductor-metal structures; optical waveguides; silicon; Si; bias voltages; carrier depletion; carrier lifetime; carrier sweepout; metal-semiconductor-metal junctions; metal-semiconductor-metal structure; photogenerated carriers; silicon waveguide; Charge carrier lifetime; Gold; Optical losses; Optical waveguides; Probes; Schottky barriers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183808
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